ATOMIC-SCALE FORMATION OF ULTRASMOOTH SURFACES ON SAPPHIRE SUBSTRATES FOR HIGH-QUALITY THIN-FILM FABRICATION

The atomically ultrasmooth surfaces with atomic steps of sapphire substrates were obtained by annealing in air at temperatures between 1000 and 1400 degrees C. The terrace width and atomic step height of the ultrasmooth surfaces were controlled on an atomic scale by changing the annealing conditions and the crystallographic surface of substrates. The obtained ultrasmooth surface was stable in air, The topmost atomic structure of the terrace was examined quantitatively by atomic force microscopy and ion scattering spectroscopy as well as a theoretical approach using molecular dynamics simulations. (C) 1995 American Institute of Physics.