C-V ANALYSIS OF A PARTIALLY DEPLETED SEMICONDUCTING CHANNEL

被引:31
作者
LEHOVEC, K [1 ]
机构
[1] UNIV SO CALIF,LOS ANGELES,CA 90007
关键词
D O I
10.1063/1.88088
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:82 / 84
页数:3
相关论文
共 7 条
[1]  
BUSCH G, 1956, HELV PHYS ACTA, V29, P196
[2]   CALCULATIONS ON THE SHAPE AND EXTENT OF SPACE CHARGE REGIONS IN SEMICONDUCTOR SURFACES [J].
DOUSMANIS, GC ;
DUNCAN, RC .
JOURNAL OF APPLIED PHYSICS, 1958, 29 (12) :1627-1629
[3]   ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS IN SILICON BY DIFFERENTIAL CAPACITANCE TECHNIQUE [J].
KENNEDY, DP ;
MURLEY, PC ;
KLEINFELDER, W .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1968, 12 (05) :399-+
[4]   DETERMINATION OF IMPURITY AND MOBILITY DISTRIBUTIONS IN EPITAXIAL SEMICONDUCTING-FILMS ON INSULATING SUBSTRATE BY C-V AND Q-V ANALYSIS [J].
LEHOVEC, K .
APPLIED PHYSICS LETTERS, 1974, 25 (05) :279-281
[5]   Simplified and advanced Theory of the Boundary Layer Rectifiers [J].
Schottky, W. .
ZEITSCHRIFT FUR PHYSIK, 1942, 118 (9-10) :539-592
[6]   THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J].
SHOCKLEY, W .
BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03) :435-489