CARRIER PROPAGATION IN SPUTTERED A-SI-H

被引：31

作者：

KIRBY, PB

PAUL, W

机构：

来源：

PHYSICAL REVIEW B | 1982年 / 25卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.25.5373

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5373 / 5383

页数：11

共 25 条

[1] HOLE DRIFT MOBILITY IN AMORPHOUS SILICON [J].

ALLAN, D .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 38 (04) :381-392

[2]

DATTA T, 1981, TETRAHEDRALLY BONDED, P202

[3] DRIFT MOBILITY AND PHOTOCONDUCTIVITY IN AMORPHOUS SILICON [J].

FUHS, W ;

MILLEVILLE, M ;

STUKE, J .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 89 (02) :495-502

[4] DISPERSIVE TRANSPORT AND RECOMBINATION LIFETIME IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON [J].

HVAM, JM ;

BRODSKY, MH .

PHYSICAL REVIEW LETTERS, 1981, 46 (05) :371-374

[5] MEASUREMENT OF THERMAL RELEASE AND TRANSIT TIME IN CASE OF MULTIPLE TRAPPING [J].

JUSKA, G ;

MATULIONIS, A ;

VISCAKAS, J .

PHYSICA STATUS SOLIDI, 1969, 33 (02) :533-+

[6]

KIRBY PB, UNPUB

[7] TRAP-LIMITED MODEL FOR DISPERSIVE TRANSPORT IN SEMICONDUCTORS [J].

MARSHALL, JM .

PHILOSOPHICAL MAGAZINE, 1977, 36 (04) :959-975

[8] MULTIPLE-TRAPPING MODEL OF ANOMALOUS TRANSIT-TIME DISPERSION IN A-SE [J].

NOOLANDI, J .

PHYSICAL REVIEW B, 1977, 16 (10) :4466-4473

[9] THERMALIZATION AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS [J].

ORENSTEIN, J ;

KASTNER, MA .

SOLID STATE COMMUNICATIONS, 1981, 40 (01) :85-89

[10] THEORY OF TRANSIENT SPACE-CHARGE PERTURBED CURRENTS IN INSULATORS [J].

PAPADAKIS, AC .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (04) :641-+

← 1 2 3 →