THE ACTIVATION-ENERGY OF PHOSPHORUS DONORS IN SILICON-RICH SILICON GERMANIUM ALLOYS

被引：14

作者：

KRUSSMANN, R ^{[1
]}

VOLLMER, H ^{[1
]}

LABUSCH, R ^{[1
]}

机构：

[1] SONDERFORSCH BEREICH 126,GOTTINGEN,FED REP GER

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1983年 / 118卷 / 01期

关键词：

D O I：

10.1002/pssb.2221180133

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：275 / 282

页数：8

共 14 条

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[2]

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[3]

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PAFF, RJ ;

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[5]

ESHELBY JD, 1956, SOLID STATE PHYS, V3, P79

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FAULKNER, RA .

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[7]

LAMMERSDORF C, 1977, THESIS CLAUSTHAL

[8] MULTIVALLEY EFFECTIVE-MASS APPROXIMATION FOR DONOR STATES IN SILICON .1. SHALLOW-LEVEL GROUP-V IMPURITIES [J].

NING, TH ;

SAH, CT .

PHYSICAL REVIEW B, 1971, 4 (10) :3468-&

[9] THEORY OF LOCALIZED STATES IN SEMICONDUCTORS .2. PSEUDO IMPURITY THEORY APPLICATION TO SHALLOW AND DEEP DONORS IN SILICON [J].

PANTELIDES, ST ;

SAH, CT .

PHYSICAL REVIEW B, 1974, 10 (02) :638-658

[10] THEORY OF LOCALIZED STATES IN SEMICONDUCTORS .1. NEW RESULTS USING AN OLD METHOD [J].

PANTELIDES, ST ;

SAH, CT .

PHYSICAL REVIEW B, 1974, 10 (02) :621-637

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