PERSISTENT PHOTOCONDUCTIVITY IN DONOR-DOPED CD-1-XZN-XTE

被引：80

作者：

BURKEY, BC ^{[1
]}

KHOSLA, RP ^{[1
]}

FISCHER, JR ^{[1
]}

LOSEE, DL ^{[1
]}

机构：

[1] EASTMAN KODAK CO,RES LABS,ROCHESTER,NY 14650

来源：

关键词：

D O I：

10.1063/1.322732

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1095 / 1102

页数：8

共 12 条

[1] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P123
[2] SELF-COMPENSATION IN CDTE
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OTTAVIANI, G
BELL, RO
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[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1974, 35 (10) : 1405 - 1413
[3] NON-G DONOR LEVELS AND KINETICS OF ELECTRON-TRANSFER IN N-TYPE CDTE
ISELER, GW
KAFALAS, JA
STRAUSS, AJ
BUBE, RH
MACMILLAN, HF
[J]. SOLID STATE COMMUNICATIONS, 1972, 10 (07) : 619 - +
[4] ISELER GW, 1972, B AM PHYS SOC, V17, P304
[5] PERSISTENT PHOTOCONDUCTIVITY IN CD1-XZNXTE-CL
KHOSLA, RP
BURKEY, BC
FISCHER, JR
LOSEE, DL
[J]. SOLID STATE COMMUNICATIONS, 1974, 15 (11-1) : 1809 - 1812
[6] SOME PROPERTIES OF DOUBLE ACCEPTOR CENTER IN CDTE
LORENZ, MR
WOODBURY, HH
SEGALL, B
[J]. PHYSICAL REVIEW, 1964, 134 (3A): : A751 - +
[7] LOSEE DL, UNPUBLISHED
[8] MACMILLAN HF, 1972, THESIS STANFORD U
[9] OSCILLATORY PHOTOCONDUCTIVITY AND ENERGY-BAND PARAMETERS OF ZNTE
NAHORY, RE
FAN, HY
[J]. PHYSICAL REVIEW LETTERS, 1966, 17 (05) : 251 - +
[10] Electron mobility in II-VI semiconductors
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[J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (10): : 4036 - 4044