A HIGH-PERFORMANCE LATERAL GEOMETRY TRANSISTOR FOR COMPLEMENTARY INTEGRATED CIRCUITS

被引:2
作者
HILBIBER, DF
机构
关键词
D O I
10.1109/T-ED.1967.15966
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:381 / &
相关论文
共 4 条
[1]  
COMBS C, 1966 INT EL DEV M WA
[2]  
JENNINGS JE, 1966 INT EL DEV M WA
[3]   LATERAL COMPLEMENTARY TRANSISTOR STRUCTURE FOR SIMULTANEOUS FABRICATION OF FUNCTIONAL BLOCKS [J].
LIN, HC ;
FORMIGONI, N ;
VANDERLEK, B ;
TAN, TB ;
CHANG, GY .
PROCEEDINGS OF THE IEEE, 1964, 52 (12) :1491-+
[4]   INTEGRATED COMPLEMENTARY DEVICES FABRICATED BY ELECTROCHEMICAL TECHNIQUES [J].
MACKINTOSH, IM ;
LARKIN, MW ;
SCHMIDT, PF .
PROCEEDINGS OF THE IEEE, 1964, 52 (12) :1447-&