IDENTIFICATION OF TELLURIUM PRECIPITATES IN CADMIUM TELLURIDE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：19

作者：

CHEW, NG

CULLIS, AG

WILLIAMS, GM

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 10期

关键词：

D O I：

10.1063/1.95026

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1090 / 1092

页数：3

共 11 条

[1] PARTIAL PRESSURES + GIBBS FREE ENERGY OF FORMATION FOR CONGRUENTLY SUBLIMING CDTE(C) [J].

BREBRICK, RF ;

STRAUSS, AJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (12) :1441-&

[2] IODINE ION MILLING OF INDIUM-CONTAINING COMPOUND SEMICONDUCTORS [J].

CHEW, NG ;

CULLIS, AG .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :142-144

[3]

CHEW NG, 1984, I PHYS C SER, V68, P437

[4] ARSENIC PRECIPITATION AT DISLOCATIONS IN GAAS SUBSTRATE MATERIAL [J].

CULLIS, AG ;

AUGUSTUS, PD ;

STIRLAND, DJ .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2556-2560

[5] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH STRUCTURAL PERFECTION, HETERO-EPITAXIAL CDTE-FILMS ON INSB (001) [J].

FARROW, RFC ;

JONES, GR ;

WILLIAMS, GM ;

YOUNG, IM .

APPLIED PHYSICS LETTERS, 1981, 39 (12) :954-956

[6] LATTICE-DEFECTS IN (HG,CD)TE - INVESTIGATIONS OF THEIR NATURE AND EVOLUTION [J].

SCHAAKE, HF ;

TREGILGAS, JH ;

LEWIS, AJ ;

EVERETT, PM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03) :1625-1630

[7] CHARACTERIZATION OF TE PRECIPITATES IN CDTE CRYSTALS [J].

SHIN, SH ;

BAJAJ, J ;

MOUDY, LA ;

CHEUNG, DT .

APPLIED PHYSICS LETTERS, 1983, 43 (01) :68-70

[8]

SWANSON HE, 1953, NBS539 CIRC, V1

[9]

Verma A.R., 1966, POLYMORPHISM POLYTYP

[10]

WILLIAMS GM, 1984, 3RD INT C MOL BEAM E

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