DARK DISCHARGE OF SURFACE-POTENTIAL IN DISORDERED MATERIALS (A-SE)

[1] CHEMICAL MODIFICATION OF THE ELECTRICAL BEHAVIOR OF A-SE AND ITS ALLOYS - XEROGRAPHIC STUDIES [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 953 - 956

[2] THE EFFECT OF TE ALLOYING ON THE ELECTRONIC GAP OF A-SE [J]. SOLID STATE COMMUNICATIONS, 1982, 44 (10) : 1431 - 1434

[3] XEROGRAPHIC SPECTROSCOPY OF GAP STATES IN AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1982, 25 (04): : 2567 - 2577

[4] ARCHIPOV VI, 1979, PHYS STAT SOLIDI A, V54, P67

[5] Borisova Z., 1973, IZV AKAD NAUK SSSR N, V9, P822

[6] Davis E. A., 1979, Amorphous semiconductors, P41

[7] DOBROVOLSKIS A, 1975, LITHUAN PHYS COLL, V15, P811

[8] GAIDALIS VI, 1966, LITOV FIZ SB, V6, P263

[9] GAIDELIS VI, 1968, PHYSICAL PROCESSES E, P367

[10] DARK DISCHARGE IN AMORPHOUS AS2SE3 FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) : 2670 - &

[1] CHEMICAL MODIFICATION OF THE ELECTRICAL BEHAVIOR OF A-SE AND ITS ALLOYS - XEROGRAPHIC STUDIES [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 953 - 956

[2] THE EFFECT OF TE ALLOYING ON THE ELECTRONIC GAP OF A-SE [J]. SOLID STATE COMMUNICATIONS, 1982, 44 (10) : 1431 - 1434

[3] XEROGRAPHIC SPECTROSCOPY OF GAP STATES IN AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1982, 25 (04): : 2567 - 2577

[4] ARCHIPOV VI, 1979, PHYS STAT SOLIDI A, V54, P67

[5] Borisova Z., 1973, IZV AKAD NAUK SSSR N, V9, P822

[6] Davis E. A., 1979, Amorphous semiconductors, P41

[7] DOBROVOLSKIS A, 1975, LITHUAN PHYS COLL, V15, P811

[8] GAIDALIS VI, 1966, LITOV FIZ SB, V6, P263

[9] GAIDELIS VI, 1968, PHYSICAL PROCESSES E, P367

[10] DARK DISCHARGE IN AMORPHOUS AS2SE3 FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) : 2670 - &