THE SILICON IMPURITY AS A POSSIBLE GROWTH-REGIME INDICATOR FOR LINBO3 CRYSTALS

被引：4

作者：

ERDEI, S

SZALLER, Z

RAKSANYI, K

MATOK, G

机构：

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1985年 / 20卷 / 08期

关键词：

D O I：

10.1002/crat.2170200808

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

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页码：1047 / 1054

页数：8

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