MONTE-CARLO SIMULATION OF GAAS SUB-MICRON N+-N-N+ DIODE WITH GAAIAS HETEROJUNCTION CATHODE

被引:4
作者
TOMIZAWA, K [1 ]
AWANO, Y [1 ]
HASHIZUME, N [1 ]
SUZUKI, F [1 ]
机构
[1] ELECTROTECH LAB,NIIHARI,IBARAKI,JAPAN
关键词
D O I
10.1049/el:19820731
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1067 / 1069
页数:3
相关论文
共 7 条
[1]   MONTE-CARLO PARTICLE SIMULATION OF GAAS SUB-MICRON N+-I-N+ DIODE [J].
AWANO, Y ;
TOMIZAWA, K ;
HASHIZUME, N ;
KAWASHIMA, M .
ELECTRONICS LETTERS, 1982, 18 (03) :133-135
[2]  
CASEY HC, 1978, HETEROSTRUCTURE LASE, P188
[3]   QUANTUM-MECHANICAL REFLECTION OF ELECTRONS AT METAL-SEMICONDUCTOR BARRIERS - ELECTRON TRANSPORT IN SEMICONDUCTOR-METAL-SEMICONDUCTOR STRUCTURES [J].
CROWELL, CR ;
SZE, SM .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) :2683-&
[4]  
EASTMAN LF, 1982, GERMAN PHYSICAL SOC
[5]  
EASTMAN LF, 1981, INT S GAAS RELATED C, P245
[6]   COLLECTIVE ENERGY LOSSES IN SOLIDS [J].
PINES, D .
REVIEWS OF MODERN PHYSICS, 1956, 28 (03) :184-198
[7]  
TOMIZAWA K, 1982, 1 IEE P SOL STAT EL, V129, P131