STEADY-STATE TRANSPORT IN TRAP-DOMINATED RELAXATION SEMICONDUCTORS

被引:18
作者
SCHETZINA, JF [1 ]
机构
[1] N CAROLINA STATE UNIV,DEPT PHYS,RALEIGH,NC 27607
来源
PHYSICAL REVIEW B | 1975年 / 11卷 / 12期
关键词
D O I
10.1103/PhysRevB.11.4994
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:4994 / 4998
页数:5
相关论文
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