DEPOSITION OF HIGH-QUALITY A-SI-H BY DIRECT PHOTODECOMPOSITION OF SI2H6 USING VACUUM ULTRAVIOLET-LIGHT

被引：20

作者：

FUYUKI, T

DU, KY

OKAMOTO, S

YASUDA, S

KIMOTO, T

YOSHIMOTO, M

MATSUNAMI, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 05期

关键词：

D O I：

10.1063/1.342498

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2380 / 2383

页数：4

共 20 条

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[9] SILICON THIN-FILM FORMATION BY DIRECT PHOTOCHEMICAL DECOMPOSITION OF DISILANE [J].

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[10] PROPERTIES OF A-SI-H PREPARED BY THE PHOTOCHEMICAL DECOMPOSITION OF SI2H6 [J].

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