DETERMINATION OF LATTICE STRAIN IN PROTON-BOMBARDED REGIONS OF SINGLE-CRYSTAL GALLIUM-ARSENIDE, USING PRECISION X-RAY MEASUREMENTS

被引：6

作者：

HALLIWELL, MAG

HECKINGBOTTOM, R

HEMMENT, PLF

机构：

[1] POST OFF RES CTR,IPSWICH IP5 7RE,SUFFOLK,ENGLAND

[2] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1977年 / 10卷 / 04期

关键词：

D O I：

10.1088/0022-3727/10/4/001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L29 / L31

页数：3

共 13 条

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[9] ELECTRICAL-CONDUCTIVITY OF DISORDERED LAYERS IN GAAS CRYSTAL PRODUCED BY ION-IMPLANTATION [J].

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