POSITRON LIFETIME MEASUREMENTS IN N-TYPE AND P-TYPE SILICON

被引：14

作者：

DORIKENS, M ^{[1
]}

DAUWE, C ^{[1
]}

DORIKENS.L ^{[1
]}

机构：

[1] RIJKS UNIV GHENT,NATUURKUNDIG LAB,PROEFTUIN STR 86,B-9000 GHENT,BELGIUM

来源：

APPLIED PHYSICS | 1974年 / 4卷 / 03期

关键词：

D O I：

10.1007/BF00884239

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：271 / 272

页数：2

共 9 条

[1] Theory of semiconductor response to charged particles [J].

Brandt, Werner ;

Reinheimer, Julian .

PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (08) :3104-3112

[2] POSITRON LIFETIMES IN PROTON-IRRADIATED SILICON [J].

CHENG, LJ ;

YEH, CK .

SOLID STATE COMMUNICATIONS, 1973, 12 (06) :529-531

[3]

DAUWE C, TO BE PUBLISHED

[4] ELECTRON MOMENTUM DISTRIBUTION IN SILICON AND GERMANIUM BY POSITRON ANNIHILATION [J].

ERSKINE, JC ;

MCGERVEY, JD .

PHYSICAL REVIEW, 1966, 151 (02) :615-&

[5]

FABRI G, 1967, POSITRON ANNIHILATIO

[6] POSITRON ANNIHILATION IN SEMICONDUCTORS [J].

FIESCHI, R ;

GAINOTTI, A ;

GHEZZI, C ;

MANFREDI, M .

PHYSICAL REVIEW, 1968, 175 (02) :383-&

[7] A SIMPLE AND ACCURATE METHOD FOR CALIBRATING NANOSECOND TIME-TO-PULSE-HEIGHT CONVERTERS [J].

GRAHAM, RL ;

GEIGER, JS ;

BELL, RE ;

BARTON, R .

NUCLEAR INSTRUMENTS & METHODS, 1962, 15 (01) :40-44

[8] POSITRON LIFETIMES IN METALS [J].

WEISBERG, H ;

BERKO, S .

PHYSICAL REVIEW, 1967, 154 (02) :249-&

[9]

MONSANTO EUROPE OTTE

← 1 →