MAGNETIC AND MAGNETOOPTICAL PROPERTIES AND CRYSTALLIZATION KINETICS OF RAPID-THERMALLY CRYSTALLIZED BISUBSTITUTED GARNET-FILMS

被引：15

作者：

SUZUKI, T ^{[1
]}

ZAHARCHUK, G ^{[1
]}

GORMAN, G ^{[1
]}

SEQUEDA, F ^{[1
]}

LABUN, P ^{[1
]}

机构：

[1] ARIZONA STATE UNIV,HIGH RESOLUTION ELECTRON MICROSCOPY FACIL,TEMPE,AZ 85287

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1990年 / 26卷 / 05期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/20.104572

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A rapid thermal anneal for forming films of garnet phase deposited by sputtering is discussed in connection with magnetic, magneto-optical and optical properties. It was found the rapid thermal anneal kinetics in a temperature range from 620 to 680 °C involve a high activation energy for crystallization which is a diffusion controlled growth, whereas in a higher temperature range it has a relatively low activation energy. The controllability of the magnetic properties of Tcomp. as well as coercivity can be achieved through the rapid thermal annealing method. © 1990 IEEE

引用

页码：1927 / 1929

页数：3

共 6 条

[1]

BLANK SL, 1975, J ELECTROCHEM SOC, V123, P856

[2]

BURKE J, 1965, KINETICS PHASE TRANS, P192

[3] RF-SPUTTERED FILMS OF BISUBSTITUTED GARNET FOR MAGNETOOPTICAL MEMORY [J].