SOME PROPERTIES OF MOVING HIGH-FIELD DOMAIN IN GUNN EFFECT DEVICES

[1] BARRAUD A, 1963, ACADEMIE SCIENCES, V256, P3632

[2] BUTCHER PN, TO BE PUBLISHED

[3] CHYNOWETH AG, UNPUBLISHED DATA

[4] INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) : 141 - &

[5] GUNN JB, 1964, 1964 INT C SEM PHYS

[6] HEEKS JS, 1965, 1965 IEREIEE S MICR

[7] TRANSFERRED ELECTRON AMPLIFIERS AND OSCILLATORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (02): : 185 - &

[8] MECHANISM OF GUNN EFFECT FROM A PRESSURE EXPERIMENT [J]. PHYSICAL REVIEW LETTERS, 1965, 14 (16) : 639 - +

[9] KING G, UNPUBLISHED DATA

[10] THEORY OF GUNN EFFECT [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1736 - &

[1] BARRAUD A, 1963, ACADEMIE SCIENCES, V256, P3632

[2] BUTCHER PN, TO BE PUBLISHED

[3] CHYNOWETH AG, UNPUBLISHED DATA

[4] INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) : 141 - &

[5] GUNN JB, 1964, 1964 INT C SEM PHYS

[6] HEEKS JS, 1965, 1965 IEREIEE S MICR

[7] TRANSFERRED ELECTRON AMPLIFIERS AND OSCILLATORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (02): : 185 - &

[8] MECHANISM OF GUNN EFFECT FROM A PRESSURE EXPERIMENT [J]. PHYSICAL REVIEW LETTERS, 1965, 14 (16) : 639 - +

[9] KING G, UNPUBLISHED DATA

[10] THEORY OF GUNN EFFECT [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1736 - &