PROTECTION OF AN INTERRUPTED MOLECULAR-BEAM-EPITAXIALLY GROWN SURFACE BY A THIN EPITAXIAL LAYER OF INAS

被引:2
作者
CHANG, YJ
KROEMER, H
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 02期
关键词
D O I
10.1116/1.583165
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:518 / 519
页数:2
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