PHONON LINEWIDTH AND BOND ANGLE DEVIATION IN AMORPHOUS-SILICON AND GERMANIUM

被引:23
作者
TSU, R
PAESLER, MA
SAYERS, D
机构
[1] MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
[2] N CAROLINA STATE UNIV,RALEIGH,NC 27695
关键词
D O I
10.1016/0022-3093(89)90112-9
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:199 / 201
页数:3
相关论文
共 14 条
[1]   COMPARATIVE-STUDY OF STRUCTURE OF EVAPORATED AND GLOW-DISCHARGE SILICON [J].
BARNA, A ;
BARNA, PB ;
RADNOCZI, G ;
TOTH, L ;
THOMAS, P .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 41 (01) :81-84
[2]   STRUCTURAL INFORMATION FROM THE RAMAN-SPECTRUM OF AMORPHOUS-SILICON [J].
BEEMAN, D ;
TSU, R ;
THORPE, MF .
PHYSICAL REVIEW B, 1985, 32 (02) :874-878
[3]   STRESS-INDUCED SHIFTS OF FIRST-ORDER RAMAN FREQUENCIES OF DIAMOND AND ZINC-BLENDE-TYPE SEMICONDUCTORS [J].
CERDEIRA, F ;
BUCHENAUER, CJ ;
CARDONA, M ;
POLLAK, FH .
PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02) :580-+
[4]   HEAT OF CRYSTALLIZATION AND MELTING-POINT OF AMORPHOUS-SILICON [J].
DONOVAN, EP ;
SPAEPEN, F ;
TURNBULL, D ;
POATE, JM ;
JACOBSON, DC .
APPLIED PHYSICS LETTERS, 1983, 42 (08) :698-700
[5]  
KSHIRSAGAR ST, 1981, J PHYSIQUE, V54, P42
[6]   ORDERING OF AMORPHOUS-GERMANIUM PRIOR TO CRYSTALLIZATION [J].
PAESLER, MA ;
SAYERS, DE ;
TSU, R ;
GONZALEZHERNANDEZ, J .
PHYSICAL REVIEW B, 1983, 28 (08) :4550-4557
[7]  
Polk D. E., 1971, Journal of Non-Crystalline Solids, V5, P365, DOI 10.1016/0022-3093(71)90038-X
[8]   TEMPERATURE-DEPENDENCE OF SILICON RAMAN LINES [J].
TSU, R ;
HERNANDEZ, JG .
APPLIED PHYSICS LETTERS, 1982, 41 (11) :1016-1018
[9]   DETERMINATION OF THE ENERGY BARRIER FOR STRUCTURAL RELAXATION IN AMORPHOUS SI AND GE BY RAMAN-SCATTERING [J].
TSU, R ;
GONZALEZHERNANDEZ, J ;
POLLAK, FH .
SOLID STATE COMMUNICATIONS, 1985, 54 (05) :447-450
[10]   OPTICAL-ABSORPTION AND DISORDER IN HYDROGENATED AMORPHOUS SI-GE AND SI-C ALLOY SYSTEMS [J].
TSU, R ;
MENNA, P ;
MAHAN, AH .
SOLAR CELLS, 1987, 21 :189-194