POLARIZATION CHARGE RELAXATION AND THE COULOMB STAIRCASE IN ULTRASMALL DOUBLE-BARRIER TUNNEL-JUNCTIONS

被引：17

作者：

SCHONENBERGER, C ^{[1
]}

VANHOUTEN, H ^{[1
]}

BEENAKKER, CWJ ^{[1
]}

机构：

[1] LEIDEN UNIV,INST LORENTZ,2300 RA LEIDEN,NETHERLANDS

来源：

PHYSICA B | 1993年 / 189卷 / 1-4期

关键词：

D O I：

10.1016/0921-4526(93)90163-Z

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Experimental results are reported on the Coulomb staircase in a double-barrier tunnel junction formed by the tip of a cryogenic scanning tunneling microscope, an ultrasmall Au particle (4 nm in diameter), a ZrO2 tunnel oxide-barrier, and a Au covered substrate. Two discrepancies with the orthodox model (global rule) are frequently found: an enhanced asymptotic separation of the current-voltage characteristic, and an anomalous suppression of the first current steps in the region around zero voltage. These observations are tentatively attributed to the effect of slow dielectric relaxation of polarization charge induced in the tunnel oxide. This notion is supported, although some discrepancies remain, by a calculation of Coulomb staircases for large relaxation times according to the local rule.

引用

页码：218 / 224

页数：7

共 16 条

[1]

Averin D. V., 1991, MESOSCOPIC PHENOMENA

[2] TIME-CORRELATED SINGLE-ELECTRON TUNNELING IN ONE-DIMENSIONAL ARRAYS OF ULTRASMALL TUNNEL-JUNCTIONS [J].

DELSING, P ;

LIKHAREV, KK ;

KUZMIN, LS ;

CLAESON, T .

PHYSICAL REVIEW LETTERS, 1989, 63 (17) :1861-1864

[3] OBSERVATION OF SINGLE-ELECTRON CHARGING EFFECTS IN SMALL TUNNEL-JUNCTIONS [J].

FULTON, TA ;

DOLAN, GJ .

PHYSICAL REVIEW LETTERS, 1987, 59 (01) :109-112

[4] FREQUENCY-LOCKED TURNSTILE DEVICE FOR SINGLE ELECTRONS [J].

GEERLIGS, LJ ;

ANDEREGG, VF ;

HOLWEG, PAM ;

MOOIJ, JE ;

POTHIER, H ;

ESTEVE, D ;

URBINA, C ;

DEVORET, MH .

PHYSICAL REVIEW LETTERS, 1990, 64 (22) :2691-2694

[5]

Grabert H, 1992, NATO ASI SERIES B, V294

[6] VARIATION OF THE COULOMB STAIRCASE IN A 2-JUNCTION SYSTEM BY FRACTIONAL ELECTRON CHARGE [J].

HANNA, AE ;

TINKHAM, M .

PHYSICAL REVIEW B, 1991, 44 (11) :5919-5922

[7] EFFECT OF THE ELECTROMAGNETIC ENVIRONMENT ON THE SINGLE ELECTRON TRANSISTOR [J].

INGOLD, GL ;

WYROWSKI, P ;

GRABERT, H .

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1991, 85 (03) :443-449

[8] SINGLE-ELECTRON TUNNELING IN SYSTEMS OF SMALL JUNCTIONS COUPLED TO AN ELECTROMAGNETIC ENVIRONMENT [J].

ODINTSOV, AA ;

FALCI, G ;

SCHON, G .

PHYSICAL REVIEW B, 1991, 44 (23) :13089-13092

[9]

SCHONENBERGER C, IN PRESS SURF SCI

[10]

SCHONENBERGER C, IN PRESS EUROPHYS LE

← 1 2 →