HEAVILY ACCUMULATED SURFACES OF MERCURY CADMIUM TELLURIDE DETECTORS - THEORY AND EXPERIMENT

被引:6
作者
LOWNEY, JR [1 ]
SEILER, DG [1 ]
THURBER, WR [1 ]
YU, Z [1 ]
SONG, XN [1 ]
LITTLER, CL [1 ]
机构
[1] UNIV N TEXAS,DEPT PHYS,DENTON,TX 76203
关键词
HGCDTE PHOTOCONDUCTIVE DETECTORS; SHUBNIKOV-DEHAAS OSCILLATIONS; SURFACE PASSIVATION; 2D ELECTRON GAS;
D O I
10.1007/BF02817514
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Some processes used to passivate n-type mercury cadmium telluride photoconductive infrared detectors produce electron accumulation layers at the surfaces, which result in 2D electron gases. The dispersion relations for the electric subbands that occur in these layers have been calculated from first principles. Poisson's equation for the built-in potential and Schroedinger's equation for the eigenstates have been solved self-consistently. The cyclotron effective masses and Fermi energies have been computed for each subband density for 12 total densities between 0.1 to 5.0 X 10(12) cm-2. The agreement with Shubnikov-de Haas measurements is very good at lower densities with possible improvement if band-gap narrowing effects were to be included. At higher densities, larger differences occur. The simple 2D description is shown to break down as the density increases because the wave functions of the conduction and valence bands cannot be well separated by the narrow band gap of long-wavelength detectors. These results provide a basis for characterizing the passivation processes, which greatly affect device performance.
引用
收藏
页码:985 / 991
页数:7
相关论文
共 13 条
[1]   BAND STRUCTURE OF INDIUM ANTIMONIDE [J].
KANE, EO .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) :249-261
[2]   BOUND-STATES IN INVERSION-LAYERS ON P-HG1-XCDXTE - SELF-CONSISTENT RESULTS [J].
NACHEV, I .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (01) :29-34
[3]   CALCULATIONS OF MAGNETOTRANSPORT PROPERTIES OF INSB BICRYSTALS WITH SEVERAL POPULATED Q-2-D-SUBBANDS [J].
NACHTWEI, G ;
SCHULZE, D ;
GOBSCH, G ;
PAASCH, G ;
KRAAK, W ;
KRUGER, H ;
HERRMANN, R .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1988, 148 (01) :349-359
[4]   INTERFACE BETWEEN HG1-XCDXTE AND ITS NATIVE OXIDE [J].
NEMIROVSKY, Y ;
KIDRON, I .
SOLID-STATE ELECTRONICS, 1979, 22 (10) :831-837
[5]   PASSIVATION OF MERCURY CADMIUM TELLURIDE SURFACES [J].
NEMIROVSKY, Y ;
BAHIR, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (02) :450-459
[6]   HIGH MAGNETIC-FIELD CHARACTERIZATION OF (HG, CD)TE SURFACE-LAYERS [J].
NICHOLAS, RJ ;
NASIR, F ;
SINGLETON, J .
JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :656-666
[7]   TEMPERATURE AND COMPOSITION DEPENDENCE OF THE ENERGY-GAP OF HG1-XCDXTE BY 2-PHOTON MAGNETOABSORPTION TECHNIQUES [J].
SEILER, DG ;
LOWNEY, JR ;
LITTLER, CL ;
LOLOEE, MR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (02) :1237-1244
[8]   SHUBNIKOV-DEHAAS MEASUREMENTS ON N-TYPE AND P-TYPE HGTE-CDTE SUPERLATTICES [J].
SEILER, DG ;
WARD, GB ;
JUSTICE, RJ ;
KOESTNER, RJ ;
GOODWIN, MW ;
KINCH, MA ;
MEYER, JR .
JOURNAL OF APPLIED PHYSICS, 1989, 66 (01) :303-307
[9]   SELF-CONSISTENT SOLUTION OF THE POISSON AND SCHRODINGER-EQUATIONS IN ACCUMULATED SEMICONDUCTOR-INSULATOR INTERFACES [J].
SUNE, J ;
OLIVO, P ;
RICCO, B .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (01) :337-345