ROLE OF SILICON DURING GROWTH OF VPE GAAS-LAYERS

被引：17

作者：

KUPPER, P ^{[1
]}

BRUCH, H ^{[1
]}

HEYEN, M ^{[1
]}

BALK, P ^{[1
]}

机构：

[1] RHEIN WESTFAL TH,INST SEMICOND ELECTR,SONDER FORSCH BEREICH FESTKORPER ELEKTR56,D-5100 AACHEN,FED REP GER

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1976年 / 5卷 / 05期

关键词：

D O I：

10.1007/BF02654338

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：455 / 472

页数：18

共 24 条

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[2]

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JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) :189-+

[8] EFFECTS OF ASCL3 MOLE FRACTION ON INCORPORATION OF GERMANIUM, SILICON, SELENIUM, AND SULFUR INTO VAPOR GROWN EPITAXIAL LAYERS OF GAAS [J].

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[9]

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