A THERMOELASTIC ANALYSIS OF THE THERMAL-STRESS PRODUCED IN A SEMI-INFINITE CYLINDRICAL SINGLE-CRYSTAL DURING THE CZOCHRALSKI GROWTH

被引:56
作者
KOBAYASHI, N
IWAKI, T
机构
关键词
D O I
10.1016/0022-0248(85)90335-5
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:96 / 110
页数:15
相关论文
共 32 条
[1]  
ADVONIN NA, 1972, SOVIET PHYS DOKL, V16, P772
[3]  
Blakemore J. S., 1982, J APPL PHYS, V52, p123(R)
[4]   DISLOCATION DENSITY AND SHEET RESISTANCE VARIATIONS ACROSS SEMI-INSULATING GAAS WAFERS [J].
BLUNT, RT ;
CLARK, S ;
STIRLAND, DJ .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (07) :943-949
[5]  
BOLEY A, 1960, THEORY THERMAL STRES, P478
[6]   CRACKING OF CZOCHRALSKI-GROWN CRYSTALS [J].
BRICE, JC .
JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) :427-430
[7]   DISLOCATION STUDIES IN 3-INCH DIAMETER LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].
CHEN, RT ;
HOLMES, DE .
JOURNAL OF CRYSTAL GROWTH, 1983, 61 (01) :111-124
[8]   MAXIMUM GROWTH-RATES FOR MELT-GROWN RIBBON-SHAPED CRYSTALS [J].
CISZEK, TF .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) :440-442
[9]   SYNTHESIS, CRYSTAL-GROWTH AND CHARACTERIZATION OF INP [J].
COQUILLE, R ;
TOUDIC, Y ;
GAUNEAU, M ;
GRANDPIERRE, G ;
PARIS, JC .
JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) :23-31
[10]   FORMATION OF DISLOCATIONS DURING LIQUID ENCAPSULATED CZOCHRALSKI GROWTH OF GAAS SINGLE-CRYSTALS [J].
DUSEAUX, M ;
JACOB, G .
APPLIED PHYSICS LETTERS, 1982, 40 (09) :790-793