COUPLING CHARACTERISTICS OF THIN-FILM METAL-OXIDE-METAL DIODES AT 10.6 MUM

被引：44

作者：

WANG, SY

IZAWA, T

GUSTAFSON, TK

机构：

[1] UNIV CALIF,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720

[2] UNIV CALIF,ELECTR RES LAB,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1975年 / 27卷 / 09期

关键词：

D O I：

10.1063/1.88541

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：481 / 483

页数：3

相关论文

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[6] AC ELECTRON TUNNELING AT INFRARED FREQUENCIES - THIN-FILM M-O-M DIODE STRUCTURE WITH BROAD-BAND CHARACTERISTICS
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[7] PROPERTIES OF INFRARED CAT-WHISKER ANTENNAS NEAR 10.6 MU
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