DOPING OF SILICON BY ION IMPLANTATION

[1] DOPING OF CRYSTALS BY ION BOMBARDMENT TO PRODUCE SOLID STATE DETECTORS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1962, 33 (05) : 567 - &

[2] THE RANGE OF ALKALI METAL IONS OF KILOELECTRON VOLT ENERGIES IN ALUMINUM [J]. CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1960, 38 (09): : 1535 - 1546

[3] DAVIES JA, 1964, JAN NEW YORK M APS

[4] FERBER RR, 1963, IEEE T NUCL SCI, V10, P15

[5] KING WJ, AF3365710505

[6] KING WJ, AD406704

[7] KING WJ, AD298681

[8] PENETRATION OF HEAVY IONS OF KEV ENERGIES INTO MONOCRYSTALLINE TUNGSTEN [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 136 (3A): : A849 - &

[1] DOPING OF CRYSTALS BY ION BOMBARDMENT TO PRODUCE SOLID STATE DETECTORS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1962, 33 (05) : 567 - &

[2] THE RANGE OF ALKALI METAL IONS OF KILOELECTRON VOLT ENERGIES IN ALUMINUM [J]. CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1960, 38 (09): : 1535 - 1546

[3] DAVIES JA, 1964, JAN NEW YORK M APS

[4] FERBER RR, 1963, IEEE T NUCL SCI, V10, P15

[5] KING WJ, AF3365710505

[6] KING WJ, AD406704

[7] KING WJ, AD298681

[8] PENETRATION OF HEAVY IONS OF KEV ENERGIES INTO MONOCRYSTALLINE TUNGSTEN [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 136 (3A): : A849 - &