CALIBRATION CURVE FOR INFRARED SPECTROPHOTOMETRY OF NITROGEN IN SILICON

被引：69

作者：

ITOH, Y ^{[1
]}

NOZAKI, T ^{[1
]}

MASUI, T ^{[1
]}

ABE, T ^{[1
]}

机构：

[1] SHINETSU SEMICOND CO LTD,ANNAKA,GUNMA 37901,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 05期

关键词：

D O I：

10.1063/1.96101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：488 / 489

页数：2

共 9 条

[1]

ABE T, 1981, SEMICONDUCTOR SILICO, P126

[2]

BLOWER KL, 1980, PHYS REV LETT, V44, P1927

[3]

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[4] NITROGEN-IMPLANTED SILICON .1. DAMAGE ANNEALING AND LATTICE LOCATION [J].

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[5] VIBRATIONAL ABSORPTION-BANDS FOR IMPLANTED NITROGEN IN CRYSTALLINE SILICON [J].

STEIN, HJ .

APPLIED PHYSICS LETTERS, 1983, 43 (03) :296-298

[6] EFFECTS OF NITROGEN ON DISLOCATION BEHAVIOR AND MECHANICAL STRENGTH IN SILICON-CRYSTALS [J].

SUMINO, K ;

YONENAGA, I ;

IMAI, M ;

ABE, T .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5016-5020

[7]

WATANABE M, 1981, SEMICONDUCTOR SILICO, P126

[8] CONCENTRATION, SOLUBILITY, AND EQUILIBRIUM DISTRIBUTION COEFFICIENT OF NITROGEN AND OXYGEN IN SEMICONDUCTOR SILICON [J].

YATSURUGI, Y ;

AKIYAMA, N ;

ENDO, Y ;

NOZAKI, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (07) :975-979

[9]

ZORIN EI, 1968, SOV PHYS SEMICOND+, V2, P111

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