THE CORRELATION OF THE 7.6 EV OPTICAL-ABSORPTION BAND IN PURE FUSED SILICON DIOXIDE WITH TWOFOLD-COORDINATED SILICON

被引：51

作者：

TRUKHIN, AN ^{[1
]}

SKUJA, LN ^{[1
]}

BOGANOV, AG ^{[1
]}

RUDENKO, VS ^{[1
]}

机构：

[1] ACAD SCI RUSSIA,INST SILICATE CHEM,199064 ST PETERSBURG,USSR

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1992年 / 149卷 / 1-2期

关键词：

D O I：

10.1016/0022-3093(92)90057-Q

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The optical absorption band at 7.6 eV, which appears in oxygen deficient pure silica, does not correlate with any ESR signal in non-irradiated samples. Longlasting illumination at 80 K in the range of its absorption leads to an increase of the absorption band at 5 eV. Subsequent heating to 290 K restores the initial absorption. These data can be explained as photodissociation and thermal recreation of a complex defect containing a twofold-coordinated silicon defect. This complex defect is responsible for the 7.6 eV absorption band.

引用

页码：96 / 101

页数：6

共 10 条

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