TRANSITION FROM BETA-TIN TO SIMPLE HEXAGONAL SILICON UNDER PRESSURE

被引:110
作者
NEEDS, RJ [1 ]
MARTIN, RM [1 ]
机构
[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND
来源
PHYSICAL REVIEW B | 1984年 / 30卷 / 09期
关键词
D O I
10.1103/PhysRevB.30.5390
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:5390 / 5392
页数:3
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