PHYSICAL-PROPERTIES OF CU-DOPED FES2 PYRITE THIN-FILMS

Cu-doped FeS2 thin films have been grown and their physical properties investigated. For this purpose a series of Fe-Cu (Cu nominal concentration of 1 at%) evaporated films has been sulfurated (sulfur pressure of 600 Torr) at different temperatures (200 to 500-degrees-C). Structural, electrical and optical characterization have shown that the films are n-type and their resistivity changes with the sulfuration temperature from 0.002 to 3.28 OMEGA . cm. Values of the film optical absorption edge vary from 0.8 to 1.1 eV with the sulfuration temperature. Discussion is made by comparing the present results with those from undoped FeS2 films prepared by the same method.