ABSOLUTE ATOMIC-SCALE MEASUREMENTS OF THE GIBBSIAN INTERFACIAL EXCESS OF SOLUTE AT INTERNAL INTERFACES

被引：190

作者：

KRAKAUER, BW ^{[1
]}

SEIDMAN, DN ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,RR MCCORMICK SCH ENGN & APPL SCI,MAT RES CTR,EVANSTON,IL 60208

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.48.6724

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A method consistent with the Gibbs' formalism is presented for measuring the Gibbsian interfacial excess of solute (GAMMA) at an internal interface using atom-probe field-ion microscopy (APFIM). The values of GAMMA are measured directly, that is, without deconvolution procedures. The relationships between GAMMA and the thermodynamic-state variables of an internal interface are studied using the techniques of APFIM and transmission electron microscopy (TEM). Examples are given of the application of APFIM-TEM to the measurement of GAMMA at grain boundaries in an Fe(Si) alloy.

引用

页码：6724 / 6727

页数：4

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