INTERFACE STATE DENSITY DISTRIBUTION IN AMORPHOUS CRYSTALLINE SILICON HETEROSTRUCTURES

被引：1

作者：

IYER, SB ^{[1
]}

KUMAR, V ^{[1
]}

HARSHAVARDHAN, KS ^{[1
]}

机构：

[1] INDIAN INST SCI,MAT RES CTR,BANGALORE 560012,KARNATAKA,INDIA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1989年 / 28卷 / 05期

关键词：

D O I：

10.1143/JJAP.28.L744

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L744 / L746

页数：3

共 10 条

[1]

Ghannam M., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P746

[2] ELECTRICAL-PROPERTIES OF N-AMORPHOUS P-CRYSTALLINE SILICON HETEROJUNCTIONS [J].

MATSUURA, H ;

OKUNO, T ;

OKUSHI, H ;

TANAKA, K .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) :1012-1019

[3] OPTOELECTRICAL PROPERTIES OF AMORPHOUS-CRYSTALLINE SILICON HETEROJUNCTIONS [J].

MIMURA, H ;

HATANAKA, Y .

APPLIED PHYSICS LETTERS, 1984, 45 (04) :452-454

[4] REVERSE CURRENT CHARACTERISTICS OF HYDROGENATED AMORPHOUS SILICON-CRYSTALLINE SILICON HETEROJUNCTIONS [J].

MIMURA, H ;

HATANAKA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (01) :60-65

[5]

OKUDA K, 1983, JPN J APPL PHYS, V22, pL603

[6] AMORPHOUS CRYSTALLINE SILICON ANISOTYPE HETEROJUNCTIONS BUILT-IN POTENTIAL, ITS DISTRIBUTION AND DEPLETION WIDTHS [J].

RUBINELLI, FA .

SOLID-STATE ELECTRONICS, 1987, 30 (03) :345-351

[7]

SASAKI K, 1985, 17TH C SOL STAT DEV, P385

[8]

SPEAR WE, 1977, 7TH P INT C AM LIQ S, P309

[9]

SZE SM, 1969, PHYSICS SEMICONDUCTO

[10] AN INVESTIGATION OF SURFACE STATES AT A SILICON SILICON OXIDE INTERFACE EMPLOYING METAL OXIDE SILICON DIODES [J].

TERMAN, LM .

SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :285-299

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