AN INTEGRATED GAS SENSOR ON SILICON SUBSTRATE WITH SENSITIVE SNOX LAYER

被引：9

作者：

STOEV, I ^{[1
]}

KOHL, D ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST PHYS 2,W-5100 AACHEN,GERMANY

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1990年 / 2卷 / 03期

关键词：

D O I：

10.1016/0925-4005(90)85010-V

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

A new approach to the creation of an integrated semiconductor gas sensor is presented. The technological processing steps of its fabrication are described. They include deposition of both polysilicon as a heater and SnOx as an active layer. The advantages of this approach over conventional sensors fabricated on a ceramic substrate are demonstrated. The functional characteristics of this sensor are illustrated by means of sensitivity tests pertinent to H2 and CH4 ambients. © 1990.

引用

页码：233 / 236

页数：4

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