IDENTIFICATION OF DEFECTS IN SIO2 THERMALLY GROWN ON CZOCHRALSKI SI

被引：2

作者：

ITSUMI, M

TOMITA, M

YAMAWAKI, M

机构：

[1] LSI Laboratories, NTT, Atsugi-Shi, Kanagawa Pref.

[2] Interdisciplinary Research Laboratories, NTT, Musashino-Shi, Tokyo

来源：

关键词：

D O I：

10.1016/0167-9317(95)00011-V

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：39 / 42

页数：4

共 18 条

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