QUANTIZATION OF ELECTRON-STATES IN ULTRATHIN XENON LAYERS

被引：24

作者：

PANIAGO, R ^{[1
]}

MATZDORF, R ^{[1
]}

MEISTER, G ^{[1
]}

GOLDMANN, A ^{[1
]}

机构：

[1] UNIV GH KASSEL,FACHBEREICH PHYS,D-34132 KASSEL,GERMANY

来源：

SURFACE SCIENCE | 1995年 / 325卷 / 03期

关键词：

ANGLE-RESOLVED PHOTOEMISSION; INTERFACE STATES; LOW-INDEX SINGLE-CRYSTAL SURFACES; METAL-INSULATOR INTERFACES; NOBLE GASES; QUANTUM EFFECTS; QUANTUM WELLS; X-RAY PHOTOELECTRON SPECTROSCOPY;

D O I：

10.1016/0039-6028(94)00740-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Physisorbed Xe was grown at temperatures T less than or equal to 55 K in a layer-by-layer mode on Ag(111) and Cu(100). High-resolution normal-emission photoelectron spectra from the Xe 5p valence levels show clear evidence for a quantization of the electron states, depending on the layer thickness. Their energies and their numbers can be explained within a very simple potential well model. We have also determined values for the electron mean free path in solid xenon from the attenuation of core level photoemission intensities.

引用

页码：336 / 342

页数：7

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