ELECTRON EFFECTIVE MASSES AND MOBILITIES IN HIGH-PURITY 6H-SIC CHEMICAL-VAPOR-DEPOSITION LAYERS

被引：85

作者：

SON, NT ^{[1
]}

KORDINA, O ^{[1
]}

KONSTANTINOV, AO ^{[1
]}

CHEN, WM ^{[1
]}

SORMAN, E ^{[1
]}

MONEMAR, B ^{[1
]}

JANZEN, E ^{[1
]}

机构：

[1] UNIV HANOI,DEPT PHYS,HANOI,VIETNAM

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 25期

关键词：

D O I：

10.1063/1.112956

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The first observation of cyclotron resonance in 6H-SiC by optically detected cyclotron resonance (ODCR) spectroscopy at X-band microwave frequency is reported. High purity undoped, n-type 6H-SiC layers grown by chemical vapor deposition (CVD), with residual doping concentrations in the 10 14-1015 cm-3 range, were investigated. Effective mass values were determined as m*⊥= (0.42±0.02)m0 and m*∥=(2. 0±0.2)m0. From the fit of the ODCR line shape, a remarkably high mobility at 6 K was deduced: μ⊥≊1.1×10 5 cm2/V s for electrons in the basal plane. The anisotropy of the effective mass and the carrier mobility is discussed in comparison with previously reported data. © 1994 American Institute of Physics.

引用

页码：3209 / 3211

页数：3

共 15 条

[1] ALMBLADH CO, UNPUB
[2] INTENSITY OF EXCITON LUMINESCENCE IN SILICON IN A WEAK MAGNETIC-FIELD
CHEN, WM
AWADELKARIM, OO
WEMAN, H
MONEMAR, B
[J]. PHYSICAL REVIEW B, 1990, 42 (08): : 5120 - 5125
[3] EXCITON RECOMBINATION RADIATION AND PHONON SPECTRUM OF 6H SIC
CHOYKE, WJ
PATRICK, L
[J]. PHYSICAL REVIEW, 1962, 127 (06): : 1868 - &
[4] COLWELL PJ, 1971, PHYS REV B, V6, P498
[5] CONDUCTION BANDS IN 6H AND 15R SILICON CARBIDE .I. HALL EFFECT AND INFRARED FARADAY ROTATION MEASUREMENTS
ELLIS, B
MOSS, TS
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1967, 299 (1458): : 383 - &
[6] HERMAN F, 1969, SILICON CARBIDE 1968, pS167
[7] ENERGY BAND STRUCTURES OF 4 POLYTYPES OF SILICON CARBIDE CALCULATED WITH EMPIRICAL PSEUDOPOTENTIAL METHOD
JUNGINGE.HG
HAERINGE.WV
[J]. PHYSICA STATUS SOLIDI, 1970, 37 (02): : 709 - &
[8] ELECTRON-CYCLOTRON RESONANCE IN CUBIC SIC
KAPLAN, R
WAGNER, RJ
KIM, HJ
DAVIS, RF
[J]. SOLID STATE COMMUNICATIONS, 1985, 55 (01) : 67 - 69
[9] KAPLAN R, 1994, PHYS C SER, V137, P207
[10] HIGH-FIELD CYCLOTRON-RESONANCE AND IMPURITY TRANSITION IN N-TYPE AND P-TYPE 3C-SIC AT MAGNETIC-FIELDS UP TO 175-T
KONO, J
TAKEYAMA, S
YOKOI, H
MIURA, N
YAMANAKA, M
SHINOHARA, M
IKOMA, K
[J]. PHYSICAL REVIEW B, 1993, 48 (15) : 10909 - 10916

← 1 2 →