POLYATOMIC-ION IMPLANTATION DAMAGE IN SILICON

被引：46

作者：

DAVIES, JA ^{[1
]}

FOTI, G ^{[1
]}

HOWE, LM ^{[1
]}

MITCHELL, JB ^{[1
]}

WINTERBON, KB ^{[1
]}

机构：

[1] ATOM ENERGY CANADA LTD,CHALK RIVER NUCL LABS,CHALK RIVER,ONTARIO,CANADA

来源：

PHYSICAL REVIEW LETTERS | 1975年 / 34卷 / 23期

关键词：

D O I：

10.1103/PhysRevLett.34.1441

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1441 / 1444

页数：4

共 11 条

[1]

EISEN FH, 1973, CHANNELING, pCH14

[2]

GYULAI J, COMMUNICATION

[3]

HIRVONEN JK, 1971, 2ND P INT C ION IMPL, P8

[4]

MITCHELL JB, 1974, 4TH P INT C ION IMPL

[5]

MOORE JB, TO BE PUBLISHED

[6]

MUELLER H, 1971, 2ND P INT C ION IMPL, P85

[7] BACKSCATTERING ANALYSIS OF ION-BOMBARDMENT DAMAGE IN NB AND W AT LOW 25 DEGREESK TEMPERATURE [J].

PRONKO, PP ;

BOTTIGER, J ;

DAVIES, JA ;

MITCHELL, JB .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1974, 21 (01) :25-30

[8]

ROOSENDAL H, 1974, THESIS U AMSTERDAM

[9] ENERGY DENSITY AND TIME CONSTANT OF HEAVY-ION INDUCED ELASTIC-COLLISION SPIKES IN SOLIDS [J].

SIGMUND, P .

APPLIED PHYSICS LETTERS, 1974, 25 (03) :169-171

[10]

Westmoreland J. E., 1970, Radiation Effects, V6, P187, DOI 10.1080/00337577008236296

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