SOLIDIFICATION OF HIGHLY UNDERCOOLED SI AND GE DROPLETS

被引:30
作者
EVANS, PV
DEVAUD, G
KELLY, TF
KIM, YW
机构
[1] HARVARD UNIV, DIV APPL SCI, CAMBRIDGE, MA 02138 USA
[2] UNIV WISCONSIN, DEPT MAT SCI & ENGN, MADISON, WI 53706 USA
来源
ACTA METALLURGICA ET MATERIALIA | 1990年 / 38卷 / 05期
关键词
D O I
10.1016/0956-7151(90)90023-A
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The production of small (5-200 nm) spheres of silicon and germanium from their melts by electrohydrodynamic atomisation (EHD) was previously reported [1]. We have examined the formation of amorphous and crystalline phases in such spheres. Analysis of electron diffraction data reveals that the smallest spheres are amorphous, with a tetrahedrally coordinated covalent random network structure, rather than being either very fine grained polycrystals or configurationally frozen metallic liquids. The formation of the semiconducting amorphous and crystalline phases is considered in terms of a competitive classical nucleation analysis, and good agreement is found for the relative proportion of each phase as a function of sphere size. © 1990.
引用
收藏
页码:719 / 726
页数:8
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