TRANSFORMATION STEPS OF STRUCTURE IN FLASH-DEPOSITED FILMS OF A-INSE

被引:37
作者
JULIEN, C
BENRAMDANE, N
GUESDON, JP
机构
[1] Lab. de Phys. des Solides, CNRS, Univ. Pierre et Marie Curie, Paris
关键词
Raman Scattering - Spectroscopy; Infrared; -; X-rays--Diffraction;
D O I
10.1088/0268-1242/5/8/018
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Conditions have been developed for the deposition of InSe semiconducting stoichiometric films using the flash evaporation technique. Structural identifications of the InSe films thus obtained have been determined using X-ray diffraction, and spectroscopic characterisations have been established by infrared and Raman scattering measurements. Optical absorption has been investigated over the range 0.8-1.5 eV. The crystallinity and morphology of films have been studied as a function of the starting material composition for which reproducible polycrystalline InSe films are found. The transformation steps of structure in flash-deposited films of a-InSe are consistent with the variation of vibrational measurements and with the changes of the absorption coefficient upon heat treatment.
引用
收藏
页码:905 / 910
页数:6
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