WAVELENGTH MODULATED REFLECTIVITY NEAR FUNDAMENTAL THRESHOLD IN ZN1-XMGXTE ALLOYS AT 300 K

被引：16

作者：

BARBIER, D ^{[1
]}

LAUGIER, A ^{[1
]}

机构：

[1] INST NATL SCI APPL LYON,CNRS,PHYS MAT LAB,F-69621 VILLEURBANNE,FRANCE

来源：

SOLID STATE COMMUNICATIONS | 1977年 / 23卷 / 07期

关键词：

D O I：

10.1016/0038-1098(77)91002-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：435 / 438

页数：4

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[9] ENERGY-GAP VARIATIONS IN SEMICONDUCTOR ALLOYS [J].

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