DETERMINATION OF NONEQUILIBRIUM ELECTRON-DISTRIBUTION FUNCTIONS IN DEGENERATE GAAS

被引：8

作者：

JANTSCH, W ^{[1
]}

BRUCKER, H ^{[1
]}

机构：

[1] JOHANNES KEPLER UNIV,LEHRKANZEL EXPTL PHYS 2,A-4045 LINZ,AUSTRIA

来源：

PHYSICAL REVIEW B | 1977年 / 15卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.15.4014

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4014 / 4019

页数：6

共 13 条

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[7]

JANTSCH W, 1971, PHYS REV B, V4, P2504

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[9] INFLUENCE OF IMPURITIES ON OPTICAL ABSORPTION EDGE OF GALLIUM ARSENIDE FROM 297 DEGREES TO 4 DEGREES K [J].

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[10] MODIFICATION OF ABSORPTION-EDGE OF GAAS ARISING FROM HOT-ELECTRON EFFECTS [J].

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