COULOMB-BLOCKADE AT 77 K IN NANOSCALE METALLIC ISLANDS IN A LATERAL NANOSTRUCTURE

被引：162

作者：

CHEN, W ^{[1
]}

AHMED, H ^{[1
]}

NAKAZOTO, K ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,HITACHI CAMBRIDGE LAB,CAMBRIDGE CB3 0HE,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 24期

关键词：

D O I：

10.1063/1.113765

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Clear Coulomb blockade effects have been observed in lateral metal nanostructures fabricated by combined electron beam lithography and ionized beam deposition. Islands between 2 and 3 nm in diameter were formed in a 25 nm gap for which the effective tunneling capacitance is calculated to be 0.2 aF. Clear Coulomb gaps and staircases were observed at 77 K in current-voltage characteristics. The staircases can still be seen at room temperature but the gaps tend to a nonlinearity in I-V characteristics around zero bias voltage. The total device area is about 0.01 μm2.© 1995 American Institute of Physics.

引用

页码：3383 / 3384

页数：2