THE ROLE OF HYDROGEN IN RADIATION-INDUCED DEFECT FORMATION IN POLYSILICON GATE MOS DEVICES

被引：99

作者：

SCHWANK, JR

FLEETWOOD, DM

WINOKUR, PS

DRESSENDORFER, PV

TURPIN, DC

SANDERS, DT

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1987年 / 34卷 / 06期

关键词：

D O I：

10.1109/TNS.1987.4337445

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1152 / 1158

页数：7

共 30 条

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