VERY-LOW-TEMPERATURE SILICON EPITAXY BY PLASMA-CVD USING SIH4-PH3-H2 REACTANTS FOR BIPOLAR-DEVICES

被引：13

作者：

UEMATSU, T ^{[1
]}

MATSUBARA, S ^{[1
]}

KONDO, M ^{[1
]}

TAMURA, M ^{[1
]}

SAITOH, T ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1988年 / 27卷 / 04期

关键词：

D O I：

10.1143/JJAP.27.L493

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L493 / L495

页数：3

共 9 条

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[8] MOLECULAR-BEAM AND SOLID-PHASE EPITAXIES OF SILICON UNDER ULTRAHIGH-VACUUM [J].

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