BULK ACCEPTOR COMPENSATION PRODUCED IN PARA-TYPE SILICON AT NEAR-AMBIENT TEMPERATURES BY A H2O PLASMA

被引：71

作者：

HANSEN, WL ^{[1
]}

PEARTON, SJ ^{[1
]}

HALLER, EE ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 06期

关键词：

D O I：

10.1063/1.94849

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：606 / 608

页数：3

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