THE ETCHING OF DOPED POLYCRYSTALLINE SILICON BY MOLECULAR CHLORINE

被引：29

作者：

OGRYZLO, EA ^{[1
]}

FLAMM, DL ^{[1
]}

IBBOTSON, DE ^{[1
]}

MUCHA, JA ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 11期

关键词：

D O I：

10.1063/1.342070

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6510 / 6514

页数：5

共 33 条

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[8] GAS-PHASE ETCHING OF SILICON WITH CHLORINE [J].

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[9]

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[10]

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