RAMAN STUDIES OF STERIC HINDRANCE AND SURFACE RELAXATION OF STEPPED H-TERMINATED SILICON SURFACES

被引：48

作者：

HINES, MA

CHABAL, YJ

HARRIS, TD

HARRIS, AL

机构：

[1] AT and T Bell Laboratories, Murray Hill

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 71卷 / 14期

关键词：

D O I：

10.1103/PhysRevLett.71.2280

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Polarized, angle-resolved Raman spectra of the Si-H stretching vibrations on stepped H-terminated Si(111) surfaces confirm the constrained orientation of the step dihydride derived from ab initio cluster calculations. They further show that the step normal modes involve little concerted motion of the step atoms, indicating that step relaxation reduces the steric interaction much further than predicted.

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页码：2280 / 2283

页数：4

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