SOME PROPERTIES OF INN FILMS PREPARED BY REACTIVE EVAPORATION

被引：77

作者：

TRAINOR, JW ^{[1
]}

ROSE, K ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,TROY,NY 12181

来源：

关键词：

D O I：

10.1007/BF02651400

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：821 / 828

页数：8

共 6 条

[1] ELECTRICAL AND OPTICAL PROPERTIES OF RF-SPUTTERED GAN AND INN [J].

HOVEL, HJ ;

CUOMO, JJ .

[2] PREPARATION AND STRUCTURAL PROPERTIES OF GAN THIN FILMS [J].

KOSICKI, BB ;

KAHNG, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04) :593-&

[3]

MADELUNG O, 1964, PHYSICS III V COMPOU

[4] PRODUCTION OF NITRIDES BY ACTIVE NITROGEN .1. GAN [J].

SHILOH, M ;

GUTMAN, J .

[5]

TRAINOR J, TO BE PUBLISHED

[6]

TRAINOR J, 1973, THESIS RENSSELAER PO