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A FIELD-INDUCED GUIDE - ANTIGUIDE MODULATOR ON GAAS-ALGAAS

被引：9
作者：
HUANG, TC
CHUNG, Y
YOUNG, DB
DAGLI, N
COLDREN, LA
机构：
[1] Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 02期
基金：
美国国家航空航天局;
关键词：
D O I：
10.1109/68.76868
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A guide-antiguide intensity modulator on GaAs-AIGaAs using the electric field induced waveguide (FIG) concept is demonstrated. The device is formed with a central waveguide electrode sandwiched between two antiguide electrodes on the surface of a p-i-n multiple quantum well (MQW). Switching between lateral guiding and antiguiding is accomplished by reverse biasing either the central electrode or the adjacent electrodes to increase the index beneath these respective regions. The on-off ratio is measured to be 20:1 with a propagation loss of on state about 5 dB/mm in an experimental structure.
引用
收藏
页码：141 / 143
页数：3
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