SELF-CONSISTENT CALCULATIONS OF ELECTRIC SUBBANDS IN P-TYPE SILICON INVERSION LAYERS

被引：28

作者：

BANGERT, E ^{[1
]}

LANDWEHR, G ^{[1
]}

机构：

[1] UNIV WURZBURG,INST PHYS,D-8700 WURZBURG,FED REP GER

来源：

关键词：

D O I：

10.1016/0039-6028(76)90123-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：138 / 140

页数：3

共 12 条

[1] BANGERT E, TO BE PUBLISHED
[2] BANGERT E, 1974, 12TH P INT C PHYS SE, P714
[3] KAMGAR A, 1974, 12TH P INT C PHYS SE, P709
[4] OSCILLATORY MAGNETOCONDUCTANCE OF PARA-TYPE INVERSION LAYERS IN SI SURFACES
LAKHANI, AA
STILES, PJ
CHENG, YC
[J]. PHYSICAL REVIEW LETTERS, 1974, 32 (18) : 1003 - 1006
[5] LANDWEHR G, 1974, P INT C HIGH MAGNETI
[6] LANDWEHR G, 1975, FESTKORPERPROBLEME, V15, P49
[7] LANDWEHR G, IN PRESS
[8] MOTION OF ELECTRONS AND HOLES IN PERTURBED PERIODIC FIELDS
LUTTINGER, JM
KOHN, W
[J]. PHYSICAL REVIEW, 1955, 97 (04): : 869 - 883
[9] OHKAWA FJ, TO BE PUBLISHED
[10] SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERS
STERN, F
[J]. PHYSICAL REVIEW B, 1972, 5 (12): : 4891 - &