ORIGIN OF THE LINEAR AND NONLINEAR PIEZORESISTANCE EFFECTS IN PARA-TYPE SILICON

被引：36

作者：

SUZUKI, K

HASEGAWA, H

KANDA, Y

机构：

[1] KYOTO UNIV,DEPT PHYS,KYOTO 606,JAPAN

[2] HAMAMATSU UNIV,SCH MED,HAMAMATSU,SHIZUOKA 43131,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 11期

关键词：

D O I：

10.1143/JJAP.23.L871

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L871 / L874

页数：4

共 14 条

[1] ELASTORESISTANCE IN P-TYPE GE AND SI [J].

ADAMS, EN .

PHYSICAL REVIEW, 1954, 96 (03) :803-804

[2] ON INTERPRETATION OF OBSERVED HOLE MASS SHIFT WITH UNIAXIAL STRESS IN SILICON [J].

BALSLEV, I ;

LAWAETZ, P .

PHYSICS LETTERS, 1965, 19 (01) :6-&

[3]

Bir GL., 1974, SYMMETRY STRAIN INDU

[4] THEORY OF CYCLOTRON RESONANCE IN STRAINED SILICON CRYSTALS [J].

HASEGAWA, H .

PHYSICAL REVIEW, 1963, 129 (03) :1029-&

[5] QUANTUM RESONANCES IN VALENCE BANDS OF GERMANIUM .2. CYCLOTRON RESONANCES IN UNIAXIALLY STRESSED CRYSTALS [J].

HENSEL, JC ;

SUZUKI, K .

PHYSICAL REVIEW B, 1974, 9 (10) :4219-4257

[6] CYCLOTRON RESONANCE EXPERIMENTS IN UNIAXIALLY STRESSED SILICON - VALENCE BAND INVERSE MASS PARAMETERS AND DEFORMATION POTENTIALS [J].

HENSEL, JC ;

FEHER, G .

PHYSICAL REVIEW, 1963, 129 (03) :1041-&

[7] A GRAPHICAL REPRESENTATION OF THE PIEZORESISTANCE COEFFICIENTS IN SILICON [J].

KANDA, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (01) :64-70

[8] ELASTIC MODULI OF SILICON VS HYDROSTATIC PRESSURE AT 25.0DEGREECS + MINUS195.8DEGREESC [J].

MCSKIMIN, HJ ;

ANDREATCH, P .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (07) :2161-&

[9]

PIKUS GE, 1959, SOV PHYS-SOL STATE, V1, P136

[10] CYCLOTRON AND PARAMAGNETIC RESONANCE IN STRAINED CRYSTALS [J].

PIKUS, GE ;

BIR, GL .

PHYSICAL REVIEW LETTERS, 1961, 6 (01) :103-&

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