HIGH-TEMPERATURE DIELECTRIC-BREAKDOWN OF SILICON DIOXIDE FILMS WITH ALUMINUM ELECTRODES

被引：7

作者：

FORBES, R

ZUKOTYNSKI, S

机构：

来源：

关键词：

D O I：

10.1149/1.2096721

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：736 / 739

页数：4

共 18 条

[1]

Bauer R.S., 1980, PHYSICS MOS INSULATO, P221

[2]

BEST JS, 1975, J APPL PHYS, V49, P4071

[3]

BLACK JR, 1978, IEEE P REL PHYS S, P233

BRANSON, DL .

[5] AL-26 DIFFUSION IN SIO2 OF INTEGRATED-CIRCUITS [J].

CAVANAGH, E ;

FRANCO, JI ;

WALSOEDERECA, NE .

[6]

CHEN IC, 1985, IEEE T ELECTRON DEV, V32, P413, DOI 10.1109/T-ED.1985.21957

[7]

Kofstad P., 1972, NONSTOICHIOMETRY ELE

[8]

Liebau F., 2012, STRUCTURAL CHEM SILI

MCCALDIN, JO ;

SANKUR, H .

[10] SLOW FRACTURE MODEL BASED ON STRAINED SILICATE STRUCTURES [J].

MICHALSKE, TA ;

BUNKER, BC .